symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 19.5 25 48 60 r jc 1 1.5 a repetitive avalanche energy l=0.3mh c 135 mj maximum junction-to-case c steady-state c/w thermal characteristicsparameter units maximum junction-to-ambient a t 10s r ja c/wc/w absolute maximum ratings t a =25c unless otherwise noted vv 20 pulsed drain current power dissipation b t c =25c gate-source voltage drain-source voltagemaximum junction-to-ambient a steady-state 8570 200 avalanche current c 30 power dissipation a t a =25c p dsm continuous draincurrent b maximum units parameter t c =25c g t c =100c 30 w junction and storage temperature range a p d c 100 50 -55 to 175 t c =100c i d 2.1 w t a =70c 1.3 a t a =70c 11 continuous draincurrent g t a =25c i dsm 14 aol1446n-channel enhancement mode field effect transistor features v ds (v) = 30v i d = 85a (v gs = 10v) r ds(on) < 7m (v gs = 10v) r ds(on) < 11m (v gs = 4.5v) uis testedrg,ciss,coss,crss tested general description the aol1446 uses advanced trench technology toprovide excellent r ds(on) , low gate chargeand low gate resistance. this device is ideally suited for use as a high side switch in cpu core power conversion. -rohs compliant -halogen and antimony free green device* g d s ultra so-8 tm top view bottom tabconnected to drain s g d alpha & omega semiconductor, ltd. www.aosmd.com
aol1446 symbol min typ max units bv dss 30 v 0.005 1 t j =55c 5 i gss 100 na v gs(th) 1 2.3 3 v i d(on) 100 a 5 7 t j =125c 6.7 8.1 8.4 11 m g fs 60 s v sd 0.72 1 v i s 85 a c iss 1325 1600 pf c oss 535 pf c rss 155 pf r g 0.95 1.5 q g (10v) 26 32 nc q g (4.5v) 13.5 18 nc q gs 3.2 nc q gd 6.6 nc t d(on) 7.2 10 ns t r 12.5 18 ns t d(off) 22 33 ns q rr 29 36 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =20a, di/dt=100a/ s drain-source breakdown voltageon state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain currentgate-body leakage current r ds(on) static drain-source on-resistanceforward transconductance diode forward voltage maximum body-diode continuous current input capacitance output capacitance dynamic parameters m v gs =4.5v, i d =20a i s =1a,v gs =0v v ds =5v, i d =20a turn-on rise timeturn-off delaytime v gs =10v, v ds =15v, r l =0.75 , r gen =3 turn-on delaytime gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate chargegate source charge gate resistance v gs =0v, v ds =0v, f=1mhz v gs =4.5v, v ds =15v, i d =20a total gate charge a: the value of r ja is measured with the device in a still air environment with t a =25c. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming amaximum junction temperature of t j(max) =175c. g. surface mounted on a 1 in 2 fr-4 board with 2oz. copper.h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating.* this device is guaranteed green after date code 8p11 (june 1 st 2008) revision 2: june 2008 alpha & omega semiconductor, ltd. www.aosmd.com
aol1446 typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 10v 4.0v 0 10 20 30 40 50 60 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 4 5 6 7 8 9 10 0 10 20 30 40 50 60 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 4 8 12 16 20 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c i d =20a alpha & omega semiconductor, ltd. www.aosmd.com
aol1446 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 400 800 1200 1600 2000 2400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 100 200 300 400 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z ? jc normalized transient thermal resistance c oss c rss 0.1 1 10 100 1000 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note h) 100 s 1ms dc r ds(on) limited t j(max) =175c t a =25c v ds =15v i d =20a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r jc =1.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t a =25c 10 s alpha & omega semiconductor, ltd. www.aosmd.com
aol1446 typical electrical and thermal characteristics 0 20 40 60 80 100 0.00001 0.0001 0.001 0.01 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 30 60 90 120 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) t a =25c 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) 0 20 40 60 80 100 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ? ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =60 c/w t on t p d in descending orderd=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse alpha & omega semiconductor, ltd. www.aosmd.com
aol1446 vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off alpha & omega semiconductor, ltd. www.aosmd.com
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